EPD measurements for low dislocation density GaAs and InP substrates

The Japan Manufacturers' Society of Compound Semiconductor Materials (JAMS-CS) performed etch pit density (EPD) round robin evaluations of undoped semi-insulating GaAs substrates for three years from 1986 to 1988 [1]. More than ten years have passed since then, and with applications for semiconductor lasers escalating, the market for low dislocation density substrate is increasing rapidly. EPD measurements for low dislocation density substrates are obviously different from that of a conventional semi-insulating GaAs substrate with EPD around 1.0 × 10⁴ cm⁻².