| 高斜率效率隧道结叠层激光器的研制 |
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| 引用本文： | 陈宏泰,张世祖,杨红伟,林琳,王晓燕,花吉珍,刘英斌,安振峰.高斜率效率隧道结叠层激光器的研制[J].微纳电子技术,2008,45(5):260-263. |
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| 作者姓名： | 陈宏泰 张世祖 杨红伟 林琳 王晓燕 花吉珍 刘英斌 安振峰 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | 隧道结叠层激光器技术具有广泛的应用空间,如高斜率效率、高功率密度、多波长激光器等。采用LP-MOCVD系统生长隧道结材料,CCl4作为p型掺杂源,SiH4作为n型掺杂源,并采用δ掺杂技术,使得n+-GaAs的掺杂浓度大于1×1019/cm3,隧道结的面电阻率小于2×10-4Ω.cm2。设计生长了双叠层、三叠层材料,该材料制作的900nm双叠层激光器在200ns脉宽、20A工作电流下输出功率35W,斜率效率1.8W/A,是单层材料的1.8倍,隧穿结引入的压降约为0.15V;860nm三叠层激光器的斜率效率大于2.7W/A,是单层材料的2.7倍。
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| 关 键 词： | 半导体激光器 隧道结 高斜率效率 双叠层 三叠层 |
| 文章编号： | 1671-4776(2008)05-0260-04 |
| 修稿时间： | 2008年3月5日 |
Development of a High Slope Efficiency Tunnel Junction Stacks Laser |
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| Chen Hongtai,Zhang Shizu,Yang Hongwei,Lin Lin,Wang Xiaoyan,Hua Jizhen,Liu Yingbin,An Zhenfeng.Development of a High Slope Efficiency Tunnel Junction Stacks Laser[J].Micronanoelectronic Technology,2008,45(5):260-263. |
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| Authors: | Chen Hongtai Zhang Shizu Yang Hongwei Lin Lin Wang Xiaoyan Hua Jizhen Liu Yingbin An Zhenfeng |
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| Affiliation: | Chen Hongtai,Zhang Shizu,Yang Hongwei,Lin Lin,Wang Xiaoyan,Hua Jizhen,Liu Yingbin,An Zhenfeng(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | The technology of a tunnel junction stack diode laser has broad applications,such as a high slope efficiency,high power density and multiwavelength diode laser.The tunnel junction epiwafer was grown by LP-MOCVD with CCl4 as p-type doping source and SiH4 as n-type.The doping concentration of n+-GaAs was more than 1×1019/cm3 and the surface resistivity of tunnel junction was less than 2×10-4Ω·cm2 through δ-doping technology.Double stacks and triple stacks laser wafers were grown and the diode laser was made.The outport power of 900 nm double stacks laser is 35 W with 200 ns pulse width at 20 A current,slope efficiency is1.8 W/A which is 1.8times higher than that of the conventional laser,and the voltage drop induced by tunnel junctions is about0.15 V.The slope efficiency of 860 nm triple stacks is about2.7 W/A,which is 2.7 times higher than that of the conventional laser. |
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| Keywords: | semiconductor laser tunnel junction high slope efficiency double stacks triple stacks |
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