A vertically integrated GaAs bipolar dynamic RAM cell with storagetimes of 4.5 h at room temperature |
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Authors: | Stellwag T.B. Cooper J.A. Jr. Melloch M.R. |
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Affiliation: | Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN; |
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Abstract: | The storage times of FET-accessed GaAs dynamic RAM cells are limited to less than 1 min at room temperature by gate leakage in the access transistor. These transistor leakage mechanisms have been eliminated by designing a vertically integrated DRAM cell in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor. Storage times of 4.5 h are obtained at room temperature, a 1000-fold increase over the best FET-accessed cells |
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