| Cl2/Ar感应耦合等离子体刻蚀InP工艺研究 |
| |
| 引用本文： | 朱海波,李晓良.Cl2/Ar感应耦合等离子体刻蚀InP工艺研究[J].功能材料与器件学报,2005,11(3):377-380. |
| |
| 作者姓名： | 朱海波 李晓良 |
| |
| 作者单位： | 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050;中国科学院研究生院,北京,100039;中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050 |
| |
| 摘 要： | 采用Cl2／Ar感应耦合等离子体对InP进行了刻蚀。讨论了直流自偏压、ICP功率、气体总流量和气体组分等因素对刻蚀速率和粗糙度的影响。结果表明Cl2／Ar气体组分是决定刻蚀效果的重要因素。当Cl2含量为30％左右时，刻蚀中的物理溅射与化学反应过程趋于平衡，刻蚀速率处于峰值区，同时刻蚀粗糙度也可达到最小值。SEM照片显示刻蚀表面光洁。侧壁陡直。
|
| 关 键 词： | 干法刻蚀 感应耦合等离子体 InP 刻蚀速率 粗糙度 |
| 文章编号： | 1007-4252（2005）03-0377-04 |
| 收稿时间： | 2004-11-12 |
| 修稿时间： | 2004-12-23 |
Inductively coupled plasma etching of InP in Cl2/Ar chemistries |
| |
| ZHU Hai-Bo,LI Xiao-liang.Inductively coupled plasma etching of InP in Cl2/Ar chemistries[J].Journal of Functional Materials and Devices,2005,11(3):377-380. |
| |
| Authors: | ZHU Hai-Bo LI Xiao-liang |
| |
| Abstract: | Inductively coupled plasma (ICP) etching of InP was performed using Cl_2/Ar. The effects of dc bias, ICP power, total flow rate and Cl_2:Ar ratio on etch rate and surface morphology are discussed. It is found that the Cl_2:Ar ratio is essential to increase etching rate and smooth etched surface. When Cl_2 content is about 30%, there is a fine balance between the ion bombardment and the chlorine reaction, where the etching rate is close to peak value and the surface is the smoothest. The SEM image shows smooth etched surface and vertical sidewall. |
| |
| Keywords: | dry etch ICP InP etch rate roughness |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
