D.c. conduction studies on thermally evaporated neodymium oxide thin films

Aluminium-neodymium oxide-aluminium thin film capacitors have been prepared by thermal evaporation and the d.c. conduction properties of these films have been studied. The thicknesses of the films have been determined by a multiple beam interferometer. The current-voltage power-law dependence showed that the conduction in these films is space-charge limited. The linear dependence of the current density on the square root of the applied field confirmed the exponential trap distribution. The trap density has been found to be of the order of 10²⁶ m^–3. It has also been observed that the Schottky type of conduction is predominant in the high-field region and the height of the Schottky barrier has been determined. It is seen that the conduction mechanism is an activated process with the activation energy decreasing with increasing field.