SOI／SIMOX材料导电类型反型的研究

采用大剂量氧离子注入（１７０ｋｅＶ，１．８×１０１８＋／ｃｍ２）ｐ型单晶硅，高温退火（１３００℃，６ｈ）后形成ＳＯＩ－ＳＩＭＯＸ（ＳｉｌｉｃｏｎＯｎＩｎｓｕｌａｔｏｒ－ＳｅｐａｒａｔｉｏｎｂｙＩｍｐｌａｎｔａｔｌｏｎｏｆＯｘｙｇｅｎ）样品。俄歇电子能谱仪和扩展电阻仪测试表明，该样品表层硅膜的导电类型由ｐ型反型为ｎ型。ＳＩＭＯＸ样品的反型是硅中的氧施主所致，由近自由电子的类氦模型计算，ＳＩＭＯＸ样品中氧施主的电离能为０．１５ｅＶ，与早期文献报导的实验值一致。

A Study on Overcompensation Effects in SOI-SIMOX Films

SOI-SIMOX samples were prepared by high dose oxygen ion implantation into p-type St-(100)wafers at 170 keV and high temperature annealing. The SIMOX sample was evaluated by Auger electron spectroscopy and spreading resistance measurements. The electrical properties of the SOI films were tested by Hall-effect measurement. The carriers in the top silicon layers of the SOI samples are reversed from p-type into n-type. The reversion is resulted from the residual oxygen atoms in the top St layers, which play the role of donors and over-compensate the acceptors in the virgin p-Si. In this work, the helium-like model was used to calculate the ionizing energy for oxygen donors. The calculated value is in good agreement to those reported in previous literatures.