提高GaAs晶体质量的一种重要手段

在ＣＺ法晶体生长工艺中引入磁场是一门新技术，它使得生长高质量大直径单晶成为可能。本文介绍了纵向磁场和横向磁场对ＧａＡｓ晶体质量的影响，重点介绍了对熔体中的温度波动、晶体中的生长条纹、ＥＬ２和电阻率分布等的影响。这门技术目前在国际上得到了广泛的应用。

Some Key Technologies of GaN Semiconductor Devices and Their Development

Since the early 1990's,ohmic contact and etching of GaN are becoming the key techniques to fabricate commercial devices after much progress has been made in p doping and heterostructure epitaxy of GaN films.More and more papers in the research field of the devices based on GaN and its alloys have been published in recent years,and there has been great interest in GaN devices and related fundamental fabricating technologies.This article aims to introduce the development in ohmic contact and etching of GaN and review its current status.