SOI技术问题和BSIM3SOIv1.3模型参数特点

SOI器件具有高速、低压、低功耗、抗辐照、耐高温等体硅器件不具备的优点,SOI CMOS技术开始用于深亚微米高速、低功耗、低电压大规模集成电路应用。但SOI技术还面临浮体效应、自加热效应等问题的挑战。作为SOI模型国际标准,BSIM3SOIv1.3提出了新的模型参数解决方案。BSIMPDSPICE器件模型是基于物理意义的模型,是在体硅MOS器件模型工业标准(BSIM3V3)的基础上开发而成,BSIMPD针对SOI固有的浮体效应引起的动态特性,自加热和体接触提出相应的模型参数。

SOI Technology's Trouble & BSIM3SOIv1.3 Model Parameter's Characteristics

SOI devices have characteristics of high-speed, low-voltage, low-power, anti-radiation, anti-high temperature, which bulk devices do not have. SOl CMOS technology is capable of providing deep-submicron VLSI devices for high-speed, low-power, low-voltage applications. But SOI technology still faces challenge from many troubles of Floating-body Effect, Self-heating Effect, etc. As an international standard of SOI model, BSIM3SOIvl.3 supplies solution of new model parameters. BSIMPD is a physics-based SPICE model developed for bridging deep-submicron CMOS designs using partially depleted SOI technologies. BSIMPD is formulated on top of the industry-standard bulk-MOSFET model BSIM3V3 for a sound base of scalability and robustness. BS1MPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models.