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| 半绝缘GaAs的表面光伏谱研究 | |
| 引用本文： | 陈宜保,江德生.半绝缘GaAs的表面光伏谱研究[J].红外与毫米波学报,2000,19(1):15-18. |
| 作者姓名： | 陈宜保 江德生 |
| 作者单位： | 1. 中国科学院半导体研究所,超晶格国家重点实验室,北京,100083;北京师范大学物理系,北京,100875 2. 中国科学院半导体研究所,超晶格国家重点实验室,北京,100083 3. 北京师范大学物理系,北京,100875 4. 中国科学院半导体研究所,北京,100083 |
| 基金项目： | 中国科学院资助项目,69876037, |
| 摘 要： | 利用表面光伏法（ＳＰＶ）研究了半绝缘ＧａＡｓ（ＳＩ－ＧａＡｓ）的缺陷态,通过加直流光偏置测量了室温下带边以下的光伏响应,发现带隙内缺陷态的光伏向应主要是由于表面复合而在样品表面形成协流子浓度梯度引起的,通过实验表明ＳＰＶ是一种对ＳＩ－ＧａＡｓ晶片表面质量进行检测的非常灵敏的无损检测方法。 |
| 关 键 词： | 表面光伏谱 无损检测 砷化镓 半导体 |
| 修稿时间： | 1999-04-14 |
THE INVESTIGATIONS ON SEMI-INSULATING GaAs BY SURFACE PHOTOVOLTAIC SPECTROSCOPY |
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| CHEN Yi-Bao,JIANG De-Sheng,WANG Ruo-Zhen,HENG Hong-Jun,SUN Bao-Quan.THE INVESTIGATIONS ON SEMI-INSULATING GaAs BY SURFACE PHOTOVOLTAIC SPECTROSCOPY[J].Journal of Infrared and Millimeter Waves,2000,19(1):15-18. | |
| Authors: | CHEN Yi-Bao JIANG De-Sheng WANG Ruo-Zhen HENG Hong-Jun SUN Bao-Quan |
| Abstract: | The surface photovoltage (SPV) effect induced by the defect states in semi-insulating (SI) GaAs was studied. The PV response below the band edge was measured at room temperature with a dc optical biasing. The spectra were found to be strongly dependent on the surface recombination and were attributed to formation of the carrier concentration gradient near the surface region, showing that SPV is a very sensitive and nondestructive technique for characterizing the surface quality of the SI-GaAs wafers. |
| Keywords: | surface photovoltaic spectroscopy SI GaAs nondetructive technique |
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