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Ion beam capture and charge breeding in electron cyclotron resonance ion source plasmas
Authors:Kim Jin-Soo  Zhao L  Cluggish B P  Pardo Richard
Affiliation:FAR-TECH, Inc., San Diego, California 92121, USA. kim@far-tech.com
Abstract:Beam capture of injected ions and charge breeding in electron cyclotron resonance (ECR) charge breeder ion source plasmas has been investigated utilizing an ECR plasma modeling code, the generalized ECR ion source model, and a Monte Carlo beam capture code. Beam capturing dynamics, charge breeding in the plasma, and the extracted charged ion states are described. Optimization of ion beam energy is performed for (1) high beam capture efficiency and (2) high charge state ion beam extractions. A sample case study for ANL-ECR has been performed. Ions entering ECR ion source plasma are slowed down mostly by the background ions. Assuming Maxwellian plasma ions, maximum beam energy loss occurs when the beam velocity is around the background thermal velocity in magnitude. It is also found that beam capture location affects charge state distribution. For instance, with a majority of beam ions captured near the middle of the device higher currents for higher charge states are obtained. The beam ions captured near the entry have a higher probability of backstreaming after they are captured. For this reason, the optimum beam energy of the injected Ar(+) beam ions for charge breeding is generally higher than the optimum input beam energy for maximum beam energy loss.
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