| SILAR法制备无机化合物薄膜 |
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| 引用本文： | 靳正国,刘晓新,步绍静,程志捷. SILAR法制备无机化合物薄膜[J]. 材料导报, 2003, 17(3): 66-68 |
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| 作者姓名： | 靳正国 刘晓新 步绍静 程志捷 |
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| 作者单位： | 先进陶瓷与加工技术教育部重点实验室,天津大学材料学院,天津,300072 |
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| 摘 要： | 介绍了一种新的液相法薄膜制备工艺－SILAR法（连续离子层吸附反应法），该方法设备简单，成本低廉，成膜质量好。解释了它的非均相薄膜生长机理，对它的工艺参数影响以及研究应用情况进行了综合评述。指出了研究发展前景。
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| 关 键 词： | 制备 无机化合物薄膜 生长机理 SILAR法 连续离子层吸附反应法 工艺参数 |
Preparation of Inorganic Compound Thin Films by SILAR Method |
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| JIN Zhengguo LIU Xiaoxin BU Shaojing CHENG Zhijie. Preparation of Inorganic Compound Thin Films by SILAR Method[J]. Materials Review, 2003, 17(3): 66-68 |
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| Authors: | JIN Zhengguo LIU Xiaoxin BU Shaojing CHENG Zhijie |
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| Abstract: | A new method,called SILAR,for preparation of inorganic compound thin films is introduced. Theprocess is inexpensive and easy to control, and produces films of good quality. The growth mechanism of heterogeneous reaction of the thin film and technological parameters by SILAR method are discussed. Application and development trends are pointed out. |
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| Keywords: | SILAR method inorganic compound preparation of thin films |
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