Formation of nickel disilicide using nickel implantation and rapid thermal annealing |
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Authors: | Chel-Jong Choi Sung-Young Chang Young-Woo Ok Tae-Yeon Seong H. Gan G. Z. Pan K. N. Tu |
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Affiliation: | (1) Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju, Korea;(2) Department of Materials Science and Engineering, University of California at Los Angeles, 90095 Los Angeles, CA |
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Abstract: | Transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS), and x-ray photoemission spectroscopy (XPS) have been used to investigate the nucleation, growth, and ripening behavior of nickel-disilicide precipitates formed by Ni implantation in an amorphous-Si layer on (100) Si and followed by a two-step annealing treatment. The TEM and XPS results show that amorphous-disilicide precipitates are formed in a depth of ∼21 nm in the amorphous-Si layer when pre-annealed at 380°C for 30 sec. It is also shown that the second-step annealing at temperatures in the range of 450–600°C causes the amorphous precipitates to transform to randomly oriented crystalline ones embedded in the amorphous-Si layer. Annealing above 550°C is shown to induce the crystallization of amorphous Si by solid-phase epitaxial growth (SPEG). It is further shown that, in a prolonged annealing at high temperatures, the disilicide has dissolved and reprecipitated on the Si surface. Based on the roles of the silicide-mediated crystallization (SMC), the dissolution and reprecipitation of silicides, and SPEG, possible mechanisms are given to explain how the surface-disilicide islands are formed during annealing at temperatures of 550–950°C. |
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Keywords: | Nickel disilicide Ni implantation transmission electron microscopy secondary ion mass spectroscopy x-ray photoemission spectroscopy |
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