不同等离子体体系中纳米金刚石薄膜制备的研究

利用微波等离子体化学气相沉积（MPCVD）法分别在CH4／H2／Ar体系、CH4／H2／O2体系和C2H5OH／H2体系中进行纳米金刚石（NCD）薄膜的制备研究。采用原子力显微镜（AFM）和激光拉曼光谱（Raman）等方法对不同体系中制备得到的NCD薄膜的表面形貌及其质量进行了检测。结果表明：在CH4／H2体系中添加O2对于促进高平整度NCD薄膜的效果明显优于添加At；C2H5OH／H2体系更有利于制备颗粒更细、金刚石相含量更高的NCD薄膜。利用等离子体CVD技术的相关理论对上述结论进行了理论分析。

DEPOSITION OF NANO-CRYSTALLINE DIAMOND FILMS IN DIFFERENT PLASMA SYSTEMS

The growth technique of Nono-Crystallsne Dsamond （NCD） films was studied on single-crystalline silicon by Microwave Plasma enhanced Chemical Vapor Deposition （MPCVD） method, which was prepared respectively in CH4/H2/Ar system, CH4H2/O2 system and C2H5OH/H2 system. By using Atomic Force Microscope （AFM ） and Laser Ramau Spectroscopy methods, the morphology and quality of NCD films prepared in different systems had been detected. The results indicated that CH4H2 system with Oxygen was obviously superior to that with Argon in the promotion of high flatness NCD films; C2H5OH/H2 system was more conducive to synthesize NCD films with smaller grains and higher diamond phase con- tent. And the conclusions had also been analyzed in theory by using plasma CVD technology related theory.