| Abstract: | Constructing heterostructures with narrow-band-gap semiconductors is a promising strategy to extend light absorption range of graphitic carbon nitride (g-C3N4) and simultaneously promote charge separa-tion for its photocatalytic activity improvement.However,its highly localized electronic states of g-C3N4 hinder photo-carrier migration through bulk towards heterostructure interfaces,resulting in low charge carrier separation effidency of solid bulk g-C3N4-based heterostructures.Herein,porous g-C3N4 (PCN)material with greatly shortened migration distance of photo-carriers from bulk to surface was used as an effective substrate to host CdSe quantum dots to construct type Ⅱ heterostructure of CdSe/PCN for pho-tocatalytic hydrogen production.The homogeneous modification of the CdSe quantum dots throughout the whole bulk of PCN together with proper band alignments between CdSe and PCN enables the ef-fective separation of photo-generated charge carriers in the heterostructure.Consequently,the CdSe/PCN heterostructure photocatalyst gives the greatly enhanced photocatalytic hydrogen production activity of 192.3 μmol h-1,which is 4.4 and 8.1 times that of CdSe andPCN,respectively.This work provides a fea-sible strategy to construct carbon nitride-based heterostructure photocatalysts for boosting visible light driven water splitting performance. |
