A comprehensive model for oxide degradation

In this work we present two analytical (and physically supported) models to describe trap kinetics in both thin and ultra-thin SiO₂ films. The models are based on the different mechanism controlling the carrier transport through the oxides and on the assumption of a two step process for creating stable traps, through defect precursors. Experimental data of stress induced leakage current confirm the validity of models predictions. Furthermore, a systematic study of the transient of trap kinetics experimentally demonstrates the existence of defect precursors as well as a reduction of oxide damage under pulsed stress condition respect to DC case.