| 瞬态模式SAW TDL／P^＋N二极管存储相关卷积器 |
| |
| 引用本文： | 赵杰 张朝. 瞬态模式SAW TDL／P^＋N二极管存储相关卷积器[J]. 半导体技术, 2000, 0(4): 36-39 |
| |
| 作者姓名： | 赵杰 张朝 |
| |
| 作者单位： | [1]深圳职业技术学院电子与计算机系 [2]深圳特发泰科通信有限公司 |
| |
| 摘 要： | 对瞬态模式ＬｉＮｂＯ３抽头延迟线（ＴＤＬ）外接ＰＮ二极管阵列结构的声表面波存储相关卷积器进行了详尽的理论分析，对影响器件性能的重要参量进行了分析计算。讨论了器件存储时间与二极管少于寿命的关系，给出了二极管在窄脉冲作用下的瞬态充电过程。并对研制的器件进行了测试，器件的效率为－７６ｄＢｍ。文中结论可用于这种结构器件的设计及优化。
|
| 关 键 词： | 声表面波 存储相关卷积器 二极管 |
SAW TDL/P~+N Diode Memory Correlator in the Flash Mode |
| |
| Zhao Jie, Zhang Chao. SAW TDL/P~+N Diode Memory Correlator in the Flash Mode[J]. Semiconductor Technology, 2000, 0(4): 36-39 |
| |
| Authors: | Zhao Jie Zhang Chao |
| |
| Affiliation: | Zhao Jie; Zhang Chao |
| |
| Abstract: | In this paper, we present the detailed theoretical analysis of the surface acoustic wave memory correlator in the flash mode, composed of a LiNbO3 tapped-delay-line and a diode array. The important factors that influence the device performance are analyzed and calculated. The transient charging process of the diode array is given. The measurements were carried out for the device, showing the correlation efficiency is -76dBm. The results and the conclusions in this paper can be used for the design and optimization of SAW memory correlator of this structure. |
| |
| Keywords: | SAW memory correlator Diode array Minority carrier lifetime Flash mode |
| 本文献已被 CNKI 维普 等数据库收录！ |
