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Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

Authors:	J. Schulze M. OehmeJ. Werner

Affiliation:	Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany

Abstract:

Keywords:	Molecular beam heteroepitaxy Ge/Si heterostructure Ge pin photodiode Ge modulator Ge emitter Optoelectronic
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