The annealing of Cd1?xZnxTe in CdZn vapors |
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Authors: | Li Yujie Ma Guoli Zhan Xiaona Jie Wanqi |
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Affiliation: | (1) College of Materials Science and Engineering, Northwestern Polytechnical University, 710072 Xi’an, Republic of China;(2) Physics Department of Yantai University, 264005 Yantai, Shandong, Republic of China |
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Abstract: | As-grown CdZnTe usually contains defects, such as twins, subgrain boundaries, dislocations, and Te precipitates. It is always
important to anneal CdZnTe slices in Cd vapor to eliminate these defects, especially Te precipitates. The exchange of Zn atoms
between the slices and the vapor plays an important role during the annealing process. In this paper, the effects of Zn partial
pressure on the properties of the annealed slices are studied carefully by measuring the concentration profiles, the infrared
(IR) transmission spectra, and the x-ray rocking curves. It was found that a surface layer with different compositions and
possibly different structure from the bulk crystal formed during the annealing of CdZnTe samples in the saturated Zn vapor.
The accumulation of excess Te in the surface layer helps to increase the IR permeability of the bulk crystal greatly. To improve
the crystallization quality, a lower Zn-pressure annealing should be used following the high Zn-pressure annealing. The diffusion
of Zn in the bulk crystal has also been analyzed at the temperatures of 700°C and 500°C. Calculations determined that DZn (700°C)=4.02 × 10−12 cm2s−1 and DZn (500°C)=1.22 × 10−13 cm2s−1. |
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Keywords: | CdZnTe annealing Zn partial pressure IR permeability crystallization quality diffusion coefficient |
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