GaAs DCFL超高速集成电路研究

直接耦合场效应逻辑（ＤＣＦＬ）具有简单的结构、良好的速度／功耗性能，是ＧａＡｓＦＥＴＬＳＩ电路中一种重要的逻辑形式。传统Ｅ／Ｄ型ＤＣＦＬ电路具有较低的成品率和较差的温度特性，本文研究了改进的Ｅ／Ｅ型ＤＣＦＬ电路。对Ｅ／Ｄ、Ｅ／Ｅ型ＤＣＦＬ电路的直流、瞬态及温度特性进行了分析、模拟和比较，Ｅ／Ｅ逻辑具有良好的高温性能。经优化设计，最后制作出单门延迟约１００ｐｓ、单门功耗约１ｍＷ的Ｅ／Ｄ和Ｅ／Ｅ型ＤＣＦＬ电路，且Ｅ／Ｅ型电路较Ｅ／Ｄ型电路具有更高的成品率。

Study of GaAs DCFL VHSIC

Direct-coupled FET Logic(DCFL)is an important logic family for GaAs FET LSI circuits because of its simple structure and good speed/power performance. The conventional E/D DCFL is especially sensitive to tempera-ture shifts and has low yield, so an improved version of DCFL known as E/E logic is studied. The characteristics of DC, transient and temperature are ana-lyzed, simulated and compared for E/D and E/E logic,E/E logic has improved temperature performance. After optimum design,E/D and E/E DCFL circuit are fabricated with approximatly 100ps delay time per gate and 1mW power dissipation per gate. In addition,E/E logic offers improved yield.