1200V大容量SiC MOSFET器件研制

采用平面栅MOSFET器件结构，结合优化终端场限环设计、栅极bus-bar设计、JFET注入设计以及栅氧工艺技术，基于自主碳化硅工艺加工平台，研制了1200V大容量SiC MOSFET器件.测试结果表明，器件栅极击穿电压大于55V，并且实现了较低的栅氧界面态密度.室温下，器件阈值电压为2.7V，单芯片电流输出能力达到50A，器件最大击穿电压达到1600V.在175℃下，器件阈值电压漂移量小于0.8V；栅极偏置20V下，泄漏电流小于45nA.研制器件显示出优良的电学特性，具备高温大电流SiC芯片领域的应用潜力.

Development of 1200V High Capacity SiC MOSFET Devices

Based on CRRC silicon carbide (SiC) process technology platform,1200V high capacity SiC metal-oxide semiconductor field-effect transistor (MOSFET) device has been fabricated by adopting ion-implanted JFET region,the optimal termination design,gate bus-bar design and gate oxidation process.The fabricated SiC MOSFET is based on a planar gate structure.The test results show that the gate breakdown voltage of the device is above 55V and it achieves a relatively lower interface state density.At room temperature,the threshold voltage of the device is 2.7V.The maximum blocking voltage and the output current capability of fabricated SiC MOSFET is up to 1600V and 50A,respectively.At 175℃,the threshold voltage shift is less than 0.8V,and the gate leakage current of the device is less than 45nA when the gate voltage is 20V.All of the results show that the fabricated SiC MOSFET has superior electrical characteristics.It occupies a potential in high temperature and high power applications.