The effect of isopropyl alcohol concentration on the etching process of Si-substrates in KOH solutions

In this paper the process of silicon anisotropic etching in KOH solutions containing isopropyl alcohol in a wide concentration range is extensively studied. Though the alcohol does not take part in the etching process itself, it strongly affects the etching results. Both etch rates and the roughness of etched surfaces depend on the alcohol concentration in the etching solution, which is connected with the adsorption phenomena on the etched surface. The surface coverage with alcohol depends on the level of saturation of the etching solution and crystallographic orientation of an etched surface. It was observed that the best morphology of (1 1 0) surface was achieved just below saturation level with IPA whereas the (1 0 0) surfaces were improving above the saturation. A model, which explains these phenomena, was proposed. Based on this model, a simple way of selection of the composition of KOH solutions with alcohol additives, assuring optimization of etching results was suggested. The method is restricted to surface tension measurements and allows one to avoid elaborated etching experiments.