| 低翘曲度ITO透明导电膜玻璃的工艺研究 |
| |
| 引用本文： | 闫金良. 低翘曲度ITO透明导电膜玻璃的工艺研究[J]. 半导体光电, 2004, 25(5): 384-387 |
| |
| 作者姓名： | 闫金良 |
| |
| 作者单位： | 烟台师范学院,物理系,山东,烟台,264025 |
| |
| 基金项目： | 国家高技术研究发展计划(863计划) |
| |
| 摘 要： | 研究了不同厚度ITO膜的大尺寸超薄导电玻璃的翘曲度,ITO膜形成期间基片温度对ITO膜层晶体化程度的影响及不同基片温度下形成的ITO膜层在不同的退火条件下的退火前、后的电阻率和膜压应力.实验发现,ITO膜层的很高的压应力是导致导电膜玻璃翘曲的直接原因;采用室温沉积非晶ITO膜,然后经高温热退火可获得低膜压应力多晶相ITO膜.基于实验结论,提出了一种适合批量生产的低翘曲度ITO膜导电玻璃的制备工艺.
|
| 关 键 词： | ITO薄膜 薄基片 压应力 翘曲度 |
| 文章编号： | 1001-5868(2004)05-0384-04 |
| 修稿时间： | 2004-02-09 |
Technology of ITO Conductive Coating Glass with Low Warp |
| |
| YAN Jin-liang. Technology of ITO Conductive Coating Glass with Low Warp[J]. Semiconductor Optoelectronics, 2004, 25(5): 384-387 |
| |
| Authors: | YAN Jin-liang |
| |
| Abstract: | The warp of the large area ITO conductive coating thin glass with different ITO thickness is invectigated as well as the influence of the substrate temperature on the ITO layer crystallinity in the process of ITO film growth,and the resistivity and pressure stress of ITO film deposited at different substrate temperatures are evaluated before and after annealing at different parameters.The results show that the higher pressure stress of ITO layer is the main factors causing the warp of ITO conductive coating thin glass,and the polycrystalline ITO film with low pressure stress can be fabricated by higher temperature annealing amorphous ITO film deposited at room temperature.The fabrication of ITO conductive coating glass with low warp based on experimental results is suggested for mass production. |
| |
| Keywords: | ITO film thin substrate pressure stress warp |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
