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Galvanostatic electrodeposition and microstructure of copper (I) oxide film
Authors:Y. C. Zhou  Jay A. Switzer
Affiliation:(1) Institute of Metal Research, Chinese Academy of Science, 72 Wenhua Road, Shenyang 110015, P.R. China Fax: 0086-24-389-1320, e-mail: yczhou@imr.ac.cn, CN;(2) Department of Chemistry and Graduate Center for Material Research, University of Missouri-Rolla, Rolla, MO 65401, USA, US
Abstract: Polycrystalline copper (I) oxide films were deposited on stainless steel substrate by galvanostatic electrodeposition method and were characterized by X-ray diffraction and scanning electron microscopy. The effect of bath temperature, bath pH and current density on the compositon, grain size, surface texture and surface morphology of the electrodeposited films were investigated. The films deposited at low bath pH (≤7) consisted of copper (I) oxide and metallic copper; while the films deposited at bath pH between 8 and 12 and bath temperature of 60°C were pure copper (I) oxide. The preferred orientation of the copper (I) oxide films depended on the relative growth rate of {111} and {200} faces and could be controlled by adjusting the bath pH and/or the cathodic current density. (100)-oriented copper (I) oxide films could be deposited at pH=9 and current densities in the range of 0.25–1 mA/cm2, while (111)-oriented films could be prepared at pH=12 or at pH=9 using the current densities between 1.5–2.5 mA/cm2. Computer simulated crystallite shapes showed that the crystal shape changed from octahedral for (100)-oriented film to trucated pyramids and cubs for (111)-oriented film. And they were approved by scanning electron microscopy. Received: 1 December 1997 / Accepted: 13 December 1997
Keywords:  Copper (I) oxide  Electrochemical deposition  Thin films  Microstructure
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