C频段内匹配砷化镓功率场效应晶体管

采用离子注入、多层欧姆接触金属结构、干法刻蚀、г形栅、空气桥、通孔接地和电镀热沉等先进技术，在直径５０ｍｍＧａＡｓ片上制作了总栅宽为９．６ｍｍ的功率场效应晶体管芯片。用４枚这种芯片并联，在其输入端和输出端分别加入内匹配电路，制成了Ｃ频段内匹配功率场效应晶体管。在大于５００ＭＨｚ的带宽内，１ｄＢ增益压缩输出功率达１８Ｗ，１ｄＢ压缩增益为８．３ｄＢ，功率附加效率达３０％。

C-Band Internally Matched GaAs Power Field-Effect Transistors

Power field-effect transistor chips with 9. 6 mm gatewidth have been manufactured on 2-inch GaAs wafers by using some advanced techniques such as ion-implantation, ohmic multilayer matellization, dry etching, г-shaped gate, airbridge, via-hole grounding and plated heat-sink. C-band power field-effect transistors with four such chips parallely connected and internal matching circuits inserted at both input and output of the chips have been produced giving 1 dB compressed output power of 18 W, associated power gain of 8. 3 dB and power added efficency of 30% in bandwidth of over 500 MHz.