Scaling `ballistic' heterojunction bipolar transistors |
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Authors: | Levi A.F.J. |
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Affiliation: | AT&T Bell Labs., Murray Hill, NJ; |
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Abstract: | Reducing length scales in npn heterojunction bipolar transistors leads to unexpected changes in the fundamental limits of device performance. Very high p-type carrier concentrations in the base result in a reduced inelastic electron scattering rate. In addition, there exists a maximum base/collector bias above which ballistic collector transport is not possible, and correct scaling requires the n-type collector contact to be unusually heavily doped |
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