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Magnesium interlayered diamond coating on silicon |
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| Authors: | M.A. Dar S.G. Ansari Z.A. Ansari Hironobu Umemoto Young-Soon Kim Hyung-Kee Seo Gil-Sung Kim Eun-Kyung Suh Hyung-Shik Shin |
| Affiliation: | aThin Film Technology Laboratory, School of Chemical Engineering, Chonbuk National University, Chonju 561-756, South Korea bSchool of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan cDepartment of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, South Korea |
| Abstract: | Diamond thin films have been deposited using hot filament chemical vapour deposition technique on manually scratched p-Si(1 0 0) substrate, with and without magnesium interlayer. In spite of magnesium melting point being lower (Tm = 649 °C) than the growth temperature of the substrate (Ts 750 °C) used in these experiments, it was found that high quality diamond films could be grown on Mg covered substrate. A liquid substrate is probably generated during the diamond film growth. Raman spectroscopy analysis exhibited only the triply degenerate, zone centre optical phonon peak at 1333 cm−1 indicating that nearly stress free crystallites were present. Broadening of the Raman peak (11.76 cm−1) indicates that some small crystallites also are present. Scanning electron and atomic force microscopy accompanied by X-ray diffraction analysis where used to compare the details of diamond film growth directly on scratched Si(1 0 0) and Mg interlayered scratched Si(1 0 0) substrates. |
| Keywords: | HFCVD Diamond film Buffer layer Bias growth |
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