A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory |
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Authors: | Mu-Shih Yeh Yung-Chun Wu Kuan-Cheng Liu Ming-Hsien Chung Yi-Ruei Jhan Min-Feng Hung Lun-Chun Chen |
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Affiliation: | 1.Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan |
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Abstract: | This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 104 s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory. |
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Keywords: | Single poly-Si Gate-all-around Junctionless Fin field-effect transistor One-time programming Nonvolatile memory Three-dimensional Flash memory |
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