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Effect of Copper on the Carrier Lifetime in Black Silicon
Authors:Henrik P Porte  Dmitry Turchinovich  Saydulla Persheyev  Yongchang Fan  Mervyn J Rose  Peter Uhd Jepsen
Affiliation:(1) DTU Fotonik – Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark;(2) School of Engineering, Physics and Mathematics, University of Dundee, Dundee, DD1 4HN, UK
Abstract:Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.
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