Effect of Copper on the Carrier Lifetime in Black Silicon |
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Authors: | Henrik P Porte Dmitry Turchinovich Saydulla Persheyev Yongchang Fan Mervyn J Rose Peter Uhd Jepsen |
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Affiliation: | (1) DTU Fotonik – Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark;(2) School of Engineering, Physics and Mathematics, University of Dundee, Dundee, DD1 4HN, UK |
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Abstract: | Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the
surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that
when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon
is significantly reduced. |
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