Aktuelle Entwicklungen in der Züchtungstechnologie von CZ‐Si‐Kristallen

New systems technology for developing larger‐diameter Si wafers In the semiconductor and microelectronics industry, the idea of launching a new generation of larger‐diameter wafers is being discussed and driven forward primarily by operators of large production lines, who expect a productivity gain and cost advantage from this in their chip manufacturing. The process engineering requirements for growing large Si crystals with diameters of 300mm and 450mm mean significant demands and challenges for the suitable system technology. These new requirements cannot be fulfilled with a simple upgrade of the previous system technology. For this reason, a new development of a system generation for 300mm and 450mm Si crystals is required that differs from previous generations in its basic design, static construction and equipment and component handling. PVA TePla already has experience developing systems for 450mm wafers.