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Scanning Tunneling Luminescence of Individual CdSe Nanowires
Authors:Theresa Lutz  Alexander Kabakchiev  Thomas Dufaux  Christian Wolpert  Zhe Wang  Marko Burghard  Klaus Kuhnke  Klaus Kern
Affiliation:1. Max‐Planck‐Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany;2. Institute of Physical Chemistry, University of Hamburg, Grindelallee 117, 20146 Hamburg, Germany;3. Institute de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Abstract:The local luminescence properties of individual CdSe nanowires composed of segments of zinc blende and wurtzite crystal structures are investigated by low‐temperature scanning tunneling luminescence spectroscopy. Light emission from the wires is achieved by the direct injection of holes and electrons, without the need for coupling to tip‐induced plasmons in the underlying metal substrate. The photon energy is found to increase with decreasing wire diameter due to exciton confinement. The bulk bandgap extrapolated from the energy versus diameter dependence is consistent with photon emission from the zinc blende‐type CdSe sections.
Keywords:cadmium selenide  luminescence  nanowires  scanning probe microscopy  semiconductors
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