Switching conduction in ion-irradiated layers in GaAs |
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| Authors: | Houghton AJN |
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| Affiliation: | University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK; |
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| Abstract: | Experiments have been performed to investigate whether switching phenomena are observable in ion-irradiated GaAs. It is found that the V/I characteristics of H2+-and N+-irradiated layers show both negative resistance and switching from a high resistance to a low resistance state. Ion irradiation may thus be a useful method of fabricating switching devices. |
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