| 端部霍尔离子源工作特性及等离子体特性研究 |
| |
| 引用本文： | 潘永强,朱昌,陈智利,杭凌侠. 端部霍尔离子源工作特性及等离子体特性研究[J]. 真空科学与技术学报, 2003, 23(1): 57-60 |
| |
| 作者姓名： | 潘永强 朱昌 陈智利 杭凌侠 |
| |
| 作者单位： | 西安工业学院光电科学与工程系,西安,710032 |
| |
| 摘 要： | 研制了一种用于离子束辅助沉积光学薄膜的端部霍尔等离子体离子源 ,论述了该源的工作原理以及伏安特性。着重研究了用五栅网探针测试该源所发射的离子能量的原理和方法 ,并对测量结果进行了分析、比较。对该离子源的离子束流密度和均匀性进行了测试和分析
|
| 关 键 词： | 端部霍尔离子源 等离子体 离子束辅助沉积 光学薄膜 |
| 文章编号： | 0253-9748(2003)01-0057-04 |
| 修稿时间： | 2002-04-29 |
Studies of Properties of New End-Hall Ion Source and Its Ion Beam Characteristics |
| |
| Pan Yongqiang,Zhu Chang,Chen Zhili,Hang Lingxia. Studies of Properties of New End-Hall Ion Source and Its Ion Beam Characteristics[J]. JOurnal of Vacuum Science and Technology, 2003, 23(1): 57-60 |
| |
| Authors: | Pan Yongqiang Zhu Chang Chen Zhili Hang Lingxia |
| |
| Abstract: | A novel type of end Hall ion source has been successfully developed for optical thin film growth by ion beam assisted deposition (IBAD). Its operating principle and I U characteristics were discussed with special considerations given to the experimental ion energy evaluation of the ion emission by penta grid probing.The ion beam intensity and distributions were also studied |
| |
| Keywords: | End Hall ion source Plasma Ion beam assisted deposition (IBAD) Optical thin film |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
