Burn—in对CMOS器件电离辐射效应的影响

MOS管或IC在辐照以前，使其在较长时间内（约200h）处于一定的高温（120℃）下并加偏压。这一作用会改变器件对电离辐射的响应。器件会产生更大的N管阈值电压漂移，IC会产生更大的漏电流（一个量级以上），减小器件的时间参数退化。Burn-in效应具有很重要的辐射加固方面的意义：1）不考虑这个因素会过高估计器件的时间参数的衰退，从而淘汰掉一些可用的器件；2）对IC的静态漏电流估计不足可导致器伯提前失效。

Effects of Burn-in on Radiation Hardness of CMOS Devices

The exposure of MOS transistors or IC's to a high temperature (about 120 C) for one week or longer with a bias voltage, which is called burn-in, before radiation will change the response of devices to ionizing radiation. The radiation effects of the burn-in device differ from those of the non-burn-in device. For NMOS devices, greater threshold-voltage drift will occur, and for IC's, more leakage current and less time degradation can be induced. Research of burn-in effects is very significant for radiation hardness: 1) neglection of these effects will lead to overestimation of the time degradation of IC's, causing some possibly usable devices to be discarded; 2) underestimation of the static leakage current of IC's will make the device fail in advance.