Microstructure and thermoelectric properties of n-type 95%Bi2Te3-5%Bi2Se3 alloy produced by rapid solidification and hot extrusion |
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Authors: | Soon-Jik Hong Byong-Sun Chun |
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Affiliation: | Engineering Research Center for Rapidly Solidified Materials (RASOM), Chungnam National University, 220 Gungdong, Dajeon 305-764, South Korea |
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Abstract: | n-type SbI3-doped 95%Bi2Te3+5%Bi2Se3 compounds were prepared by a rapid solidification and extrusion at the temperature range 420-480 °C using an extrusion ratio of 25:1. The microstructure and thermoelectric properties of the compounds were investigated as a function of extrusion temperature. The fabricated powder consists of homogeneous Bi2Te3+Bi2Se3 solid solution and the relative density of over 99% was obtained by hot extrusion. The values of Seebeck coefficient for the compounds hot extruded at 420, 450, and 480 °C were −160.8, −170.2, and −165.7 μV K−1, respectively. The values of electrical resistivity (ρ) for the compounds hot extruded at 420, 450, and 480 °C were 0.49, 0.57, and 0.51×10−5 Ω m, respectively. The maximum power factor value of the compounds hot extruded at 480 °C was 53.8×106 μW cm−1 K−2. |
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Keywords: | Semiconductors Electrical properties X-ray diffraction Powder |
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