Self-buffered BaxSr1−xTiO3 films by sol-gel and RF magnetron sputtering method |
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Authors: | Wuxing Zhang,Zhongyang XuChang&rsquo an Wang,Bofang Zhao |
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Affiliation: | Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China |
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Abstract: | BaxSr1−xTiO3 (BST) films are fabricated by sol-gel and RF (radio frequency) magnetron sputtering method. A buffer layer with columnar grains by sol-gel method is introduced to improve the dielectric anomaly in BST films. We find that the presence of buffer layer can increase the differential dielectric constant against temperature in sol-gel derived BST films while not so with sputtered films. We explain this by an ‘expanded layer thickness model’ and an unstable crystallized surface, respectively. The obtained (dε/ε) dT is up to 6% around 11 °C by the sol-gel method. |
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Keywords: | Ferroelectricity Thin films Sol-gel chemistry Sputtering Dielectric properties |
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