Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films |
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| Authors: | Moon-Ho Ham Min-Chang Jeong Woo-Young Lee Jae-Min Myoung Jeung-Mi Lee Joon-Yeon Chang Suk-Hee Han |
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| Affiliation: | (1) Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 120-749 Seoul, Korea;(2) Nano Device Research Center, Korea Institute of Science and Technology, 130-650 Seoul, Korea |
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| Abstract: | We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x=0.1–0.73%)
grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase
wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic
ordering with Curie temperature in the range 550–700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR)
was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature. |
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| Keywords: | (Ga Mn)N diluted magnetic semiconductor plasma-enhanced molecular beam epitaxy (PEMBE) ferromagnetism magneto-transport |
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