Influence of the SRO as passivation layer on the microwave attenuation losses of the CPWs fabricated on HR-Si |
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| Authors: | Reynoso-Hernandez JA Rangel-Rojo R Aceves M Zaldivar I Sanchez LE Herrera M |
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| Affiliation: | Div. de Fisica Aplicada, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Mexico; |
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| Abstract: | In this letter, silicon rich oxide (SRO) is used as the passivation layer of coplanar wave guides (CPWs) fabricated on high resistivity silicon (HR-Si). The microwave performance of the CPWs is evaluated computing the attenuation loss (/spl alpha/) of the device in the 0.045-50 GHz frequency range. It is shown that for frequencies lower than 5 GHz the losses of CPWs using SRO as a passivation layer are lower than those of CPWs using SiO/sub 2/. It is also shown that using a combination of thermal and CVD SiO/sub 2/, a reduction of the losses of CPWs is obtained. |
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