Selective growth experiments on gallium arsenide (1 0 0) surfaces patterned using UV-nanoimprint lithography

We describe a nanoimprint lithography (NIL) process and subsequent solid-source molecular beam epitaxy (SSMBE) growth of III–V semiconductors on patterned substrates. In particular, growth of GaAs, GaInAs, and GaInP, and effects of growth temperature were studied using AFM, SEM, and XRD. It turns out that selective growth of GaAs on patterned substrates is relatively straightforward, but GaInAs and GaInP are more challenging. For the first time, GaInP has been selectively grown on UV-NIL-patterned substrates using SSMBE.