A miniature Q-band low noise amplifier using 0.13-/spl mu/m CMOS technology |
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| Authors: | Jeng-Han Tsai Wei-Chien Chen To-Po Wang Tian-Wei Huang Huei Wang |
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| Affiliation: | Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan; |
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| Abstract: | A miniature Q-band low noise amplifier (LNA) using 0.13-/spl mu/m standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm/sup 2/. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size. |
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