Physicochemical aspects of quantum dot array formation in the InAs/GaAs system by droplet epitaxy under MOVPE conditions |
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| Authors: | R Kh Akchurin I A Boginskaya N T Vagapova A A Marmalyuk M A Ladugin |
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| Affiliation: | (1) Rzhanov Institute of Semiconductor Physics SB RAS, Acad. Lavrent’eva Ave. 13, 630090 Novosibirsk, Russia;(2) Novosibirsk State University, Pirogova 2, 630090 Novosibirsk, Russia |
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| Abstract: | Conditions of the deposition of indium droplets on GaAs(100) substrates during low-temperature (100°C) decomposition of trimethylindium
have been studied. It is established that, in order to eliminate the partial coalescence of the indium droplets, it is possible
to use subsequent heat treatment for evaporating excess indium. The heat treatment at a temperature of 350–500°C, only slightly
modifies the composition of indium drops as a result of the substrate solution and, hence, does not significantly change the
composition of quantum dots grown in this system. |
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