MOCVD of YSZ coatings using β-diketonate precursors |
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| Authors: | V.G. Varanasi T.M. Besmann R.L. Hyde E.A. Payzant T.J. Anderson |
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| Affiliation: | aMaterials Science and Technology Division, Oak Ridge National Laboratory, P.O. Box 2008, MS 6063, Oak Ridge, TN 37831-6063, United States;bDepartment of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611-6005, United States |
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| Abstract: | Metallorganic chemical vapor deposition (MOCVD) was investigated as a more efficient means to fabricate yttria-stabilized zirconia (YSZ) for thermal barrier coating. The MOCVD precursors were Y(tmhd)3 and Zr(tmhd)4 (tmhd, 2,2,6,6-tetramethyl-3,5-heptanedianato) and delivered via aerosol-assisted liquid delivery (AALD). The maximum YSZ coating rate was 14.2 ± 1.3 μm h−1 at 827 °C yielding a layered coating microstructure. The growth was first-order with temperature below 827 °C with an apparent activation energy of 50.9 ± 4.3 kJ mol−1. Coating efficiency was a maximum of approximately 10% at the highest growth rate. While homogeneous nucleation remained a problem, the deposition of YSZ with only minor carbon content was achieved. |
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| Keywords: | Ceramics Coating materials Oxide materials Vapor deposition Thermodynamic modeling |
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