| 聚合物光波导的反应离子刻蚀工艺研究 |
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| 引用本文： | 陆志远,胡国华,恽斌峰,崔一平.聚合物光波导的反应离子刻蚀工艺研究[J].微细加工技术,2008(3). |
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| 作者姓名： | 陆志远 胡国华 恽斌峰 崔一平 |
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| 作者单位： | 东南大学,电子科学与工程学院先进光子学中心,南京,210096 |
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| 基金项目： | 教育部科学技术研究重点项目 |
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| 摘 要： | 实验研究了表面粗糙度、侧壁垂直度与各刻蚀参量之间的关系,通过对刻蚀效果的分析,发现在低功率、高CHF3含量、低压强的情况下能获得最小的表面粗糙度;在高功率、50%CHF3含量、低压强的情况下能获得较陡直的波导侧壁.利用优化的刻蚀条件,对PMMA进行刻蚀,得到了均方根粗糙度小、侧壁陡直的波导.实验发现,该刻蚀条件对其他聚合物光波导材料的刻蚀也具有一定的指导意义.
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| 关 键 词： | 反应离子刻蚀 波导 粗糙度 侧壁垂直度 |
RIE Technological Study of Polymer Optical Waveguide |
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| LU Zhi-yuan,HU Guo-hua,YUN Bin-feng,CUI Yi-ping.RIE Technological Study of Polymer Optical Waveguide[J].Microfabrication Technology,2008(3). |
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| Authors: | LU Zhi-yuan HU Guo-hua YUN Bin-feng CUI Yi-ping |
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| Affiliation: | LU Zhi-yuan,HU Guo-hua,YUN Bin-feng,CUI Yi-ping(Advanced Photonics Center,School of Electrionic Science , Engineering,Southeast University,Nanjing 210096,China) |
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| Abstract: | The experimental process for the reactive ion etching of PMMA was presented.The effect of RF power(content of CHF3,gas pressure) on surface roughness and sidewall angle was studied.After analyzing the etching results,the condition of low RF power,high content of CHF3,low gas pressure was found to obtain the lowest surface roughness and the condition of high RF power,50% content of CHF3,low gas pressure was found to obtain the vertical sidewall.Under the optimized etching condition,channel waveguide and Y-br... |
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| Keywords: | PMMA |
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