Dielectric properties of B2O3 doped Sm(Co1/2Ti1/2)O3 ceramics at microwave frequency |
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| Authors: | Hong-Tie Soong Cheng-Hsing Hsu Cheng-Liang Huang Ming-Ta Kuo |
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| Affiliation: | (1) Department of Electrical Engineering, National Cheng Kung University, 1 University Rd., Tainan, 70101, Taiwan;(2) Department of Electrical Engineering, National United University, No. 1, Lien-Da, Kung-Ching Li,, Miao-Li, 36003, Taiwan |
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| Abstract: | The microwave dielectric properties and the microstructures of Sm(Co1/2Ti1/2)O3 ceramics with B2O3 additions (0.25 and 0.5 wt%) prepared by conventional solid-state route have been investigated. The prepared Sm(Co1/2Ti1/2)O3 exhibited a mixture of Co and Ti showing 1:1 order in the B-site. Doping with B2O3 (up to 0.5 wt%) can effectively promote the densification of Sm(Co1/2Ti1/2)O3 ceramics with low sintering temperature. It is found that Sm(Co1/2Ti1/2)O3 ceramics can be sintered at 1,260 °C due to the grain boundary phase effect of B2O3 addition. At 1,290 °C, Sm(Co1/2Ti1/2)O3 ceramics with 0.5 wt% B2O3 addition possess a dielectric constant (ε r) of 27.7, a Q × f value of 33,600 (at 9 GHz) and a temperature coefficient of resonant frequency (τf) of −11.4 ppm/ °C. The B2O3-doped Sm(Co1/2Ti1/2)O3 ceramics can find applications in microwave devices requiring low sintering temperature. |
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