| 两种新结构SiGe/Si功率二极管特性模拟 |
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| 引用本文： | 祁慧,高勇,余宁梅,马丽,安涛. 两种新结构SiGe/Si功率二极管特性模拟[J]. 固体电子学研究与进展, 2004, 24(2): 168-172,228 |
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| 作者姓名： | 祁慧 高勇 余宁梅 马丽 安涛 |
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| 作者单位： | 西安理工大学电子工程系,西安,710048;西安理工大学电子工程系,西安,710048;西安理工大学电子工程系,西安,710048;西安理工大学电子工程系,西安,710048;西安理工大学电子工程系,西安,710048 |
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| 基金项目： | 信息产业部 2 0 0 1年信息产业科研试制项目 ( 0 1XK610 0 12 ) |
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| 摘 要： | 提出了在 n- 区中采用掺杂浓度三层渐变式结构 Si Ge/Si功率二极管及台面结构的 Si Ge/Si功率二极管。由 Medici模拟所得的特性表明 ,在采用 n- 区渐变掺杂结构的 p+ ( Si Ge) -n- -n+ 功率二极管中 ,在正向特性基本不发生变化的前提下 ,与 n-区固定掺杂结构相比反向恢复过程加快 ,二极管下降时间 t A 缩短近 1 /2 ;在采用台面结构的 p+ ( Si Gi) -n- -n+功率二极管中 ,反向恢复特性也有明显改进 ,电流反向恢复时间缩短近 1 /3 ,而电压反向恢复时间缩短近 1 /2。
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| 关 键 词： | 锗硅/硅异质结 pin二极管 渐变掺杂 Medici模拟 |
| 文章编号： | 1000-3819(2004)02-168-05 |
Characteristics Simulation of Two Kinds of SiGe/Si Power Diode with Novel Structure |
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| QI Hui GAO Yong YU Ningmei MA Li An Tao. Characteristics Simulation of Two Kinds of SiGe/Si Power Diode with Novel Structure[J]. Research & Progress of Solid State Electronics, 2004, 24(2): 168-172,228 |
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| Authors: | QI Hui GAO Yong YU Ningmei MA Li An Tao |
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| Abstract: | Two kinds of p +(Si 1-xGe x)-n --n + power diode with novel structure are proposed in this paper,one is with gradual doping n --region,and the other is with mesa structure.The device characteristics were simulated by Medici.From the results,it can be shown that the reverse recovery characteristics of the device are much improved than the constant doping structure,which enables the device to finish its turn-off t A process within a half shorter period.The reverse recovery characteristics are also improved for mesa structure,that is,the recovery time for current reversing shorten by and a that for voltage reversing shorten by half. |
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| Keywords: | SiGe/Si hetero-junction pin diode gradual doping Medici simulation |
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