| X波段大栅宽高输出功率AlGaN/GaN HEMT的研究 |
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| 引用本文： | 顾卫东,张志国. X波段大栅宽高输出功率AlGaN/GaN HEMT的研究[J]. 半导体技术, 2009, 34(11). DOI: 10.3969/j.issn.1003-353x.2009.11.008 |
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| 作者姓名： | 顾卫东 张志国 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,专用集成电路国家级重点实验室,石家庄,050051;中国电子科技集团公司,第十三研究所,专用集成电路国家级重点实验室,石家庄,050051;西安电子科技大学,微电子学院,西安,710071 |
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| 摘 要： | 利用MOCVD技术研制了国产SiC衬底的GaN HEMT外延材料,方块电阻小于260 Ω/□,迁移率最大值达到2 130 cm2V-1s-1,方块电阻和迁移率不均匀性小于3%,采用新的器件栅结构和高应力SiN钝化技术,降低了大栅宽器件栅泄漏电流,提高了工作电压.研制的总栅宽为25.3 mm的四胞内匹配器件X波段输出功率达到141.25 W,线性增益大于12 dB,PAE达到41.4%.
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| 关 键 词： | AlGaN/GaN HEMT 大栅宽 高电压 高输出功率 |
Study on AlGaN/GaN HEMT with Long Gate-Width and High Output Power at X Band |
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| Gu Weidong,Zhang Zhiguo. Study on AlGaN/GaN HEMT with Long Gate-Width and High Output Power at X Band[J]. Semiconductor Technology, 2009, 34(11). DOI: 10.3969/j.issn.1003-353x.2009.11.008 |
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| Authors: | Gu Weidong Zhang Zhiguo |
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| Affiliation: | Gu Weidong1,Zhang Zhiguo1,2(1.Natioanal Key Lab of ASIC,the 13th Research Insititue,CETC,Shijiazhuang 050051,China,2.School of Microelectronics,Xidian University,Xi'an 710071,China) |
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| Abstract: | A GaN epi-wafer with domestic SiC substrate was fabricated.Sheet resistance and highest mobility are 260 Ω/□ and 2 130 cm~2V~(-1)s~(-1) and un-uniformity is less than 3 ％. The leakage current of gate was depressed,and the breakdown voltage was increased by new gate structure and high stress SiN passivation. The total gate-width of internally-matched GaN HEMTs is 6.32 mm× 4,delivers a CW saturation output power of 141.25 W, power gain is 12 dB, power added efficiency is 41.4％ at X band. |
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| Keywords: | AlGaN/GaN HEMT |
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