| Sol-Gel法制备Bi_(3.15)Nd_(0.85)Ti_3O_(12)铁电薄膜 |
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| 引用本文： | 付承菊,黄志雄,李杰,郭冬云.Sol-Gel法制备Bi_(3.15)Nd_(0.85)Ti_3O_(12)铁电薄膜[J].压电与声光,2010,32(2). |
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| 作者姓名： | 付承菊 黄志雄 李杰 郭冬云 |
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| 作者单位： | 1. 武汉理工大学,材料科学与工程学院,湖北,武汉,430070
2. 重庆科技学院,机械工程学院,重庆,400042 |
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| 摘 要： | 采用溶胶-凝胶(Sol-Gel)法在Pt/Ti/SiO_2/Si衬底上制备Bi_(3.15)Nd_(0.85)Ti_3O_(12)薄膜,发现制备的薄膜具有单一的钙钛矿晶格结构,且表面平整致密.对Bi_(3.15)Nd_(0.85)Ti_3O_(12)薄膜的电学性能进行了研究.结果表明,室温下,在测试频率1 MHz时,其介电常数为213,介电损耗为0.085;在测试电压为350 kV/cm,其剩余极化值、矫顽场强分别为39.1 μC/cm~2、160.5 kV/cm;表现出良好的抗疲劳特性和绝缘性能.
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| 关 键 词： | Bi_(3.15)Nd_(0.85)Ti_3O_(12)薄膜 溶胶-凝胶(Sol-Gel)法 铁电性能 介电性能 漏电流 |
Preparation of Bi_(3.15)Nd_(0.85)Ti_3O_(12) Ferroelectric Thin Films by Sol-Gel Method |
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| FU Chengju,HUANG Zhixiong,LI Jie,GUO Dongyun.Preparation of Bi_(3.15)Nd_(0.85)Ti_3O_(12) Ferroelectric Thin Films by Sol-Gel Method[J].Piezoelectrics & Acoustooptics,2010,32(2). |
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| Authors: | FU Chengju HUANG Zhixiong LI Jie GUO Dongyun |
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| Abstract: | The Bi_(3.15)Nd_(0.85)Ti_3O_(12) thin films were fabricated on the Pt/Ti/SiO_2/Si substrates by using Sol-Gel method. The thin films showed a perovskite phase and dense microstructure. The electric performance of Bi_(3.15)Nd_(0.85)Ti_3O_(12) thin film was studied. The result showed that he dielectric constant and the dissipation factor were about 213 and 0.085 at 1 MHz at room temperature, respectively. The remnant polarizations (2P_r) and coercive field (2E_c) of the Bi_(3.15)Nd_(0.85)Ti_3O_(12) thin films were 39.1 μC/cm~2 and 160.5 kV/cm, respectively, under an applied field of 350 kV/cm. Also, the films showed fatigue-free and good insulating behavior. |
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| Keywords: | Bi_(3 15)Nd_(0 85)Ti_3O_(12) thin film Sol-Gel method ferroelectric property dielectric property leakage current |
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