一种可用于直接计算产生寿命的产生区宽度模型

本文在分析已有的深耗尽态下半导体表面产生区宽度模型的基础上,提出了一个可用于由MOS结构的电容时间瞬态特性直接计算产生寿命的新模型。该新模型可以看作是Rabbani Rabbani模型的一种简化,但同时又可看作是对Zerbst模型的一个改进。实验数据的分析表明,用该模型得到的产生寿命值与Rabbani模型的结果基本一致。

A Model of Generation Width for Direct Calculation of Generation Lifetime

On the basis of analyzing previous models of generation width, a new model of generation width is presented, which may be used to directly calculate generation lifetime from capacitance-time transient characteristics of a MOS structure. This model can be regarded as a simplicity for Rabbani model, and meantime it can be considered as an improvement on Zerbst model. The analyses of experimental data show that the generation lifetime extracted by using the new model is consistent with that by using Rabbani model.