Surface Structure Etching Law of Self-Organizing Nanomaterials Based on AFM and SEM

Abstract

With the rapid development of nanotechnology, more and more products need to be etched on the surface of nanomaterials. Due to its own limitations, it is difficult to obtain in-depth and effective data results. In order to solve the research problem of etching law, this paper studies the surface structure etching law of self-organized nanomaterials by using AFM and SEM, and analyzes its characteristics in detail, and draws the following conclusions: through the use of AFM and SEM, the needles were coated with different forces, etching speeds, and cycles of etching to etch self-organized nanomaterials. The etching depth increased with the increase of etching force. The results show that the self-organized nanomaterials in this paper are suitable for regular etching. Processing; by changing the force parameters applied by the probe, the speed of the probe etch, and the number of cycles of the probe, the etching effect of the diamond-like film coated probe on the P-Si(100) wafer was found. As the etching force increases (1?μN-12?μN), the depth and width of the etched self-organized nanomaterial gradually increase, but as the etching force continues to increase (12?μN-20μN), the etch depth appears saturated. The etch rate has little effect on the etch depth and width.