Comparison of graphene films grown on 6H-SiC and 4H-SiC substrates |
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Authors: | Sergey P. Lebedev Dmitry G. Amel’chuk Ilya A. Eliseyev Irina P. Nikitina Petr A. Dementev Alexander V. Zubov |
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Affiliation: | 1. Ioffe Institute, St.Petersburg, Russia;2. ITMO University, St.Petersburg, Russia |
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Abstract: | AbstractAtomic force microscopy, Kelvin-probe microscopy and Raman spectroscopy have been used to examine graphene films grown by thermal decomposition of the Si face of semi-insulating substrates of 6H-SiC and 4H-SiC polytypes in the atmosphere of argon. It was demonstrated that the quality of graphene grown on substrates of various polytypes at identical technological growth regimes is about the same. A conclusion was made that the differences in crystal structure between 6H-SiC and 4H-SiC does not lead to significant dissimilarities in the mechanism of sublimation of silicon carbide components from the surface of a crystal and in that of graphene crystallization. |
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Keywords: | Semi-insulating 6H-SiC and 4H-SiC thermal decomposition graphene AFM Raman spectroscopy |
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