RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-$muhbox{m}$ T-gates with a total width of $hbox{2} times hbox{150} muhbox{m}$. Final passivated performance values for these devices are $I_{max} = hbox{1279} hbox{mA/mm}$, $I_{rm DSS} = hbox{1182} hbox{mA/mm}$ , $R_{c} = hbox{0.43} Omega cdot hbox{mm}$, $rho_{s} = hbox{315} Omega/hbox{sq}$, $f_{T} = hbox{45} hbox{GHz}$, $f_{max({rm MAG})} = hbox{64} hbox{GHz}$, and $g_{m} = hbox{268} hbox{mS/mm}$. Continuous-wave power measurements at 10 GHz produced $P_{rm sat} = hbox{3.8} hbox{W/mm}$, $G_{t} = hbox{8.6} hbox{dB}$, and $hbox{PAE} = hbox{30}%$ at $V_{rm DS} = hbox{20} hbox{V}$ at 25% $I_{rm DSS}$ . To our knowledge, these are the first power measurements reported at 10 GHz for this material.